This standard describes a non-contact test method for the measurement of resistivity of semi-insulated silicon carbide single crystals. It is suitable for semi-insulated silicon carbide single crystals with resistivity ranging from 1 × 10 ^ 8 Ω · cm to 1 × 10 ^ 12 Ω · cm. The test method is based on the principle of capacitance charge and discharge, and the resistivity is calculated by real-time monitoring of the change of electricity during the discharge of the sample. The method has high-precision and high efficiency, and is suitable for electrical performance evaluation and quality control of silicon carbide single crystals.
This summary is not the original standard text and is for reference only. For accurate information, please obtain it through official channels.
| Status | Active | ||
|---|---|---|---|
| CCS | H21 | ICS | 77.040 |
| Release Date | 2022-12-30 00:00:00 | Implementation Date | 2023-04-01 00:00:00 |