The standard "GB/T 30867-2014 Test method for film thickness and total film thickness change of silicon carbide single wafers" specifies the test method for film thickness and total film thickness change (TTV) of silicon carbide single wafers, including contact and non-contact measurement techniques. Applicable to silicon carbide single wafers with a diameter of not less than 30 mm and a Film thickness of 0.13 mm to 1 mm. The standard aims to provide accurate measurement means to ensure quality control and performance optimization of silicon carbide single wafers. The standard includes requirements for measuring instruments and verification of the accuracy and conformity of test results.
This summary is not the original standard text and is for reference only. For accurate information, please obtain it through official channels.
| Status | Active | ||
|---|---|---|---|
| CCS | H83 | ICS | 29.045 |
| Release Date | 2014-07-24 00:00:00 | Implementation Date | 2015-02-01 00:00:00 |