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      The "GB/T 30869-2014 Test method for film thickness and total film thickness change of silicon wafers for solar cells" standard specifies discrete and scanning methods for the measurement of film thickness and total film thickness change of silicon wafers for solar cells. The standard applies to silicon wafers of sizes conforming to GB/T 26071 and GB/T 29055 standards, and includes contact and non-contact measurement techniques. The discrete method can be used for various measuring instruments, while the scanning method is dedicated to non-contact measurement. This standard can also be extended to silicon wafers of Miscellaneous specifications to ensure the accuracy and conformity of film thickness measurement of silicon wafers.

      This summary is not the original standard text and is for reference only. For accurate information, please obtain it through official channels.
      Status Active
      CCS H21 ICS 77.040
      Release Date 2014-07-24 00:00:00 Implementation Date 2015-02-01 00:00:00
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