The standard "GB/T 29507-2013 Wafer Flatness, Film thickness and total Film thickness change test, automatic non-contact scanning method" stipulates an automatic non-contact scanning method for testing wafer flatness, Film thickness and total Film thickness change. This method is suitable for silicon wafers with a diameter of not less than 50 mm and a Film thickness of not less than 100 μm, including cutting, grinding, etching, polishing and epitaxy. This standard provides an efficient non-Destructiveness test technique for accurate measurement of the flatness and film thickness changes of silicon wafers without affecting them, regardless of changes in film thickness, surface state, and shape.
This summary is not the original standard text and is for reference only. For accurate information, please obtain it through official channels.
| Status | Active | ||
|---|---|---|---|
| CCS | H80 | ICS | 29.045 |
| Release Date | 2013-05-09 00:00:00 | Implementation Date | 2014-02-01 00:00:00 |