The standard "GB/T 25188-2010 Film thickness measurement of ultra-thin oxidation silicon layer on the surface of silicon wafers X-Rays Electron spectroscopy for chemi-cal analysis, ESCA" specifies the use of X-Rays Electron spectroscopy for chemi-cal analysis, ESCA (XPS) measurement method of ultra-thin oxidation silicon layer on the surface of silicon wafers Film thickness. This standard is particularly suitable for ultra-thin oxidation silicon layers formed on the surface of silicon wafers by thermal oxidation method, whose Film thickness usually does not exceed 6 nanometers. The standard provides detailed operating instructions for the accurate measurement of ultrathin oxidation silicon layers, and references the relevant surface chemical analysis and X-Rays Electron Spectrometer standards to ensure measurement accuracy and reliability.