This standard specifies the test method for the determination of the resistivity of semiconductor silicon wafers and the sheet resistance of silicon thin films by the non-contact eddy current method. It is suitable for the measurement of the resistivity of silicon single crystal cutting wafers, grinding wafers and polished wafers with a diameter or side length greater than 25mm and a Film thickness of 0.1mm to 1mm, and the measurement of thin film resistance. This standard provides a reliable measurement method for silicon material mass detection and process control in the semiconductor industry.
This summary is not the original standard text and is for reference only. For accurate information, please obtain it through official channels.
| Status | Abolish | ||
|---|---|---|---|
| CCS | H80 | ICS | 29.045 |
| Release Date | 2009-10-30 00:00:00 | Implementation Date | 2010-06-01 00:00:00 |