This standard specifies methods for the detection of shallow corrosion pits on the surface of silicon wafers by thermal oxidation and chemically preferred etching techniques, applicable to the detection of p-type or n-type polishes or epitaxial wafers in the (111) or (100) crystal direction. The standard provides standardized test methods for the detection of shallow corrosion pits on the surface of silicon wafers due to contamination, which is helpful for the control of material mass and process monitoring during the fabrication of semiconductor devices.
This summary is not the original standard text and is for reference only. For accurate information, please obtain it through official channels.
| Status | Active | ||
|---|---|---|---|
| CCS | H80 | ICS | 29.045 |
| Release Date | 2011-01-10 00:00:00 | Implementation Date | 2011-10-01 00:00:00 |