This standard specifies methods for the determination of trace metal elements on the surface of silicon wafers using Inductance Coupled Plasma Mass Spectrometry (ICP-MS), which is suitable for the analysis of unpatterned silicon wafers such as silicon single crystal polishes and silicon epitaxial wafers. The standard covers the determination range of various metal elements, and provides detailed instructions on Sample Handling, Instrumentation Operation, and Data Analysis to ensure the accuracy and repeatability of measurement results.
This summary is not the original standard text and is for reference only. For accurate information, please obtain it through official channels.
| Status | Active | ||
|---|---|---|---|
| CCS | H17 | ICS | 77.040 |
| Release Date | 2020-10-11 00:00:00 | Implementation Date | 2021-09-01 00:00:00 |