GB/T 32495-2016 is aimed at the field of surface chemical analysis, focusing on secondary ion mass spectrometry technology for deep profiling of arsenic in silicon. This standard specifies the experimental process in detail, including sample preparation, instrument parameter setting, and clarifies how to use secondary ion mass spectrometry to obtain the depth distribution information of arsenic in silicon. Through standardized operation, the content of arsenic in different depths of silicon materials can be accurately determined. The standard provides a unified method for deep profiling of arsenic in silicon for semiconductor and other related industries, which helps material performance research and mass control, and promotes the development of industry technology.