This standard specifies a method for the determination of phosphorus, arsenic, antimony and other donor impurities in silicon materials for photovoltaic cells by secondary ion Mass Spectrometer (SIMS), which is suitable for samples with a concentration greater than 1 × 10 ³ ³ atoms/cm ². Measurement principles, interference factors and accuracy control are described in detail in the standard, which provides technical guidance for the quantitative analysis of donor impurities in photovoltaic silicon materials.
This summary is not the original standard text and is for reference only. For accurate information, please obtain it through official channels.
| Status | Active | ||
|---|---|---|---|
| CCS | H82 | ICS | 29.045 |
| Release Date | 2013-11-12 00:00:00 | Implementation Date | 2014-04-15 00:00:00 |