This standard specifies the method for the determination of the content of receptor impurities such as boron and aluminum in silicon materials for photovoltaic cells using secondary ion Mass Spectrometer (SIMS), which is suitable for samples with a concentration greater than 1 × 10 ³ ³ atoms/cm ². Measurement principles, interference factors and accuracy control are covered in the standard, which provides a technical basis for the quantitative analysis of receptor impurities in photovoltaic silicon materials.
This summary is not the original standard text and is for reference only. For accurate information, please obtain it through official channels.
| Status | Active | ||
|---|---|---|---|
| CCS | H82 | ICS | 29.045 |
| Release Date | 2013-11-12 00:00:00 | Implementation Date | 2014-04-15 00:00:00 |