GB/T 24580-2009 Focuses on the detection of boron stains in heavily doped n-type silicon substrates, using secondary ion Mass spectrometry. The standard introduces the detection principle, specifies the required secondary ion Mass Spectrometer and other equipment and related reagents. Detailed description of Sample Handling, such as cutting and cleaning of silicon substrates, as well as instrument parameter setting, calibrating process and detection process. With this standard, the degree of boron stains in heavily doped n-type silicon substrates can be accurately determined, providing a key mass detection method for semiconductor silicon substrate production, ensuring semiconductor product performance, and promoting technological progress in the industry.