GB/T 20176-2006 is a standard in the field of surface chemical analysis. It focuses on secondary ion mass spectrometry technology, which aims to determine the atomic concentration of boron in silicon by uniformly doping substances. The standard explains the determination principle in detail, puts forward requirements for instruments, equipment, sample preparation, etc., and specifies specific determination steps and data processing methods. The standard provides a reliable specification for the accurate determination of boron atomic concentration in silicon, helps related scientific research and production, and ensures the smooth development of product quality control and research and development in semiconductor and other industries.