This standard specifies the grades and classifications, technical requirements, test methods, inspection rules, and requirements for marking, Encasement, transportation and storage of 4H and 6H carbide silicon single crystal polishing wafers. It is suitable for the production of epitaxial materials for power electronic devices, radio frequency microwave devices and LED light-emitting devices. The standard describes in detail the quality control process of carbide silicon single crystal polishing wafers, including detection methods and accompanying documentation requirements, to ensure the application of polishing wafers in high-tech fields Stability and Reliability.
This summary is not the original standard text and is for reference only. For accurate information, please obtain it through official channels.
| Status | Active | ||
|---|---|---|---|
| CCS | H83 | ICS | 29.045 |
| Release Date | 2023-03-17 00:00:00 | Implementation Date | 2023-10-01 00:00:00 |