This standard describes a method for testing the thickness of silicon carbide epitaxial layers by infrared reflection. It is suitable for testing the thickness of silicon carbide epitaxial layers with homoplasmic doping concentrations less than 1X10 ^ 16 cm ^ -3 on silicon carbide substrates with doping concentrations greater than 1X10 ^ 18 cm ^ -3. The test thickness ranges from 3 μm to 200 μm. By analyzing the interference fringe characteristics in the reflection spectrum, the epitaxial layer thickness is calculated in combination with the difference of Optical inspection constants to ensure the accuracy and Reliability of the test results.
This summary is not the original standard text and is for reference only. For accurate information, please obtain it through official channels.
| Status | Active | ||
|---|---|---|---|
| CCS | H21 | ICS | 77.040 |
| Release Date | 2023-08-06 00:00:00 | Implementation Date | 2024-03-01 00:00:00 |