This standard describes in detail the method for measuring the resistivity of semiconductor wafers and the sheet resistance of semiconductor thin films using the non-contact eddy current method. Applicable to the resistivity testing of silicon, conductive gallium arsenide and conductive silicon carbide single wafers with a diameter or side length of not less than 25.0 mm and a thickness of 0.1 mm to 1.0 mm, and the resistance measurement of thin films with a film resistance higher than 1,000 times. This standard ensures the accuracy and repeatability of resistance measurement in different semiconductor materials.
This summary is not the original standard text and is for reference only. For accurate information, please obtain it through official channels.
| Status | Active | ||
|---|---|---|---|
| CCS | H21 | ICS | 77.040 |
| Release Date | 2023-08-06 00:00:00 | Implementation Date | 2024-03-01 00:00:00 |