This standard describes the method for testing surface defects of 4H-SiC epitaxial wafers by laser scattering. It is suitable for the semiconductor industry where surface quality control of epitaxial wafers is required, especially for the detection of microstructures such as triangular defects.
This summary is not the original standard text and is for reference only. For accurate information, please obtain it through official channels.
| Status | Active | ||
|---|---|---|---|
| CCS | H21 | ICS | 77.040 |
| Release Date | 2023-08-06 00:00:00 | Implementation Date | 2024-03-01 00:00:00 |