This standard specifies the conversion relationship between the resistivity of boron-doped, phosphorus-doped and arsenic-doped silicon single crystals and the concentration of dopants, which is applicable to a wide range of doping concentrations. The standard can be extended to antimony-doped silicon single crystals and includes conversion methods from resistivity to carrier concentration.
This summary is not the original standard text and is for reference only. For accurate information, please obtain it through official channels.
| Status | Active | ||
|---|---|---|---|
| CCS | H80 | ICS | 29.045 |
| Release Date | 2014-12-31 00:00:00 | Implementation Date | 2015-09-01 00:00:00 |