The GB/T1551-2009 standard focuses on the resistivity measurement of silicon single crystals. It is clearly applicable to all kinds of silicon single crystals. It elaborates the measurement principles of the four-probe method and the extended resistance method, and specifies the key links such as equipment, sample preparation, and test procedures. With this standard, the resistivity data of silicon single crystals can be accurately obtained, which provides an important basis for the mass evaluation of silicon single crystal materials and the selection of semiconductor device manufacturing materials, and effectively promotes the technological progress of the semiconductor industry and the mass improvement of products.