This standard specifies the method for the measurement of the radial resistivity change of silicon single wafers using the straight row four-probe method. It is suitable for silicon single crystal wafers with a diameter greater than 15 mm and a resistivity of 1X10-3Ω ● cm to 3X103Ω ● cm. The standard provides four selection points, and different radial resistivity changes can be measured according to the selection.
This summary is not the original standard text and is for reference only. For accurate information, please obtain it through official channels.
| Status | Active | ||
|---|---|---|---|
| CCS | H17 | ICS | 77.040.01 |
| Release Date | 2007-09-11 00:00:00 | Implementation Date | 2008-02-01 00:00:00 |